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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/ChoiYHKCL09>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chel-Jong_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ha-Yong_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyo-Bong_Hong>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jin-Gyu_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jouhahn_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sung-Yong_Chang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2008.12.014>
foaf:homepage <https://doi.org/10.1016/j.microrel.2008.12.014>
dc:identifier DBLP journals/mr/ChoiYHKCL09 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2008.12.014 (xsd:string)
dcterms:issued 2009 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chel-Jong_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ha-Yong_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyo-Bong_Hong>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jin-Gyu_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jouhahn_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sung-Yong_Chang>
swrc:number 4 (xsd:string)
swrc:pages 463-465 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/ChoiYHKCL09/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/ChoiYHKCL09>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr49.html#ChoiYHKCL09>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2008.12.014>
dc:title Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 49 (xsd:string)