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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/DengYWHW16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cong_Ye>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hao_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiaji_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pin_He>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tengfei_Deng>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2015.11.018>
foaf:homepage <https://doi.org/10.1016/j.microrel.2015.11.018>
dc:identifier DBLP journals/mr/DengYWHW16 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2015.11.018 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cong_Ye>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hao_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiaji_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pin_He>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tengfei_Deng>
swrc:pages 34-38 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/DengYWHW16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/DengYWHW16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr57.html#DengYWHW16>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2015.11.018>
dc:title Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 57 (xsd:string)