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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/DjeffalBAB11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fay%E2%88%9A%C3%9Fal_Djeffal>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mohamed_Amir_Abdi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bendib>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bentrcia>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2010.10.002>
foaf:homepage <https://doi.org/10.1016/j.microrel.2010.10.002>
dc:identifier DBLP journals/mr/DjeffalBAB11 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2010.10.002 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fay%E2%88%9A%C3%9Fal_Djeffal>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mohamed_Amir_Abdi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bendib>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Toufik_Bentrcia>
swrc:number 3 (xsd:string)
swrc:pages 550-555 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/DjeffalBAB11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/DjeffalBAB11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr51.html#DjeffalBAB11>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2010.10.002>
dc:title Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 51 (xsd:string)