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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/EfthymiouRW16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/E._Efthymiou>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._Rutter>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/P._Whiteley>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2015.11.021>
foaf:homepage <https://doi.org/10.1016/j.microrel.2015.11.021>
dc:identifier DBLP journals/mr/EfthymiouRW16 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2015.11.021 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/E._Efthymiou>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Rutter>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/P._Whiteley>
swrc:pages 26-32 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/EfthymiouRW16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/EfthymiouRW16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr58.html#EfthymiouRW16>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2015.11.021>
dc:title A methodology for projecting SiO2 thick gate oxide reliability on trench power MOSFETs and its application on MOSFETs VGS rating. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 58 (xsd:string)