Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mr/GoguenheimPO07
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Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
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Oxide reliability below 3 nm for advanced CMOS: Issues, characterization, and solutions.
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