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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/HaoHLWKZ17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bin_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chen-Guang_Liao>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Haiyan_Kang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/He-Ming_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huiyong_Hu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Minru_Hao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2017.06.018>
foaf:homepage <https://doi.org/10.1016/j.microrel.2017.06.018>
dc:identifier DBLP journals/mr/HaoHLWKZ17 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2017.06.018 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Influence of ő≥-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bin_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chen-Guang_Liao>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Haiyan_Kang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/He-Ming_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huiyong_Hu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Minru_Hao>
swrc:pages 69-76 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/HaoHLWKZ17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/HaoHLWKZ17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr75.html#HaoHLWKZ17>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2017.06.018>
dc:title Influence of ő≥-ray total dose radiation effect on the hot carrier gate current of the uniaxial strained Si nano-scale NMOSFET. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 75 (xsd:string)