[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/HsuFYCCJLL10>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chia-Wei_Hsu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chieh-Ming_Lai>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chien-Ting_Lin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chun-Yu_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Feng-Renn_Juang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wen-Kuan_Yeh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yean-Kuen_Fang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yen-Ting_Chiang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2010.01.045>
foaf:homepage <https://doi.org/10.1016/j.microrel.2010.01.045>
dc:identifier DBLP journals/mr/HsuFYCCJLL10 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2010.01.045 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chia-Wei_Hsu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chieh-Ming_Lai>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chien-Ting_Lin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chun-Yu_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Feng-Renn_Juang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wen-Kuan_Yeh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yean-Kuen_Fang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yen-Ting_Chiang>
swrc:number 5 (xsd:string)
swrc:pages 618-621 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/HsuFYCCJLL10/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/HsuFYCCJLL10>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr50.html#HsuFYCCJLL10>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2010.01.045>
dc:title Improvement of TDDB reliability, characteristics of HfO2 high-k/metal gate MOSFET device with oxygen post deposition annealing. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 50 (xsd:string)