New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.
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New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.
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New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery.
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