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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/IvoGBLWBT11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Arkadiusz_Glowacki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Christian_Boit>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Eldad_Bahat-Treidel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C4%BEnther_Tr%E2%88%9A%C2%A7nkle>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Joachim_W%E2%88%9A%C4%BErfl>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ponky_Ivo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Richard_Lossy>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2010.09.029>
foaf:homepage <https://doi.org/10.1016/j.microrel.2010.09.029>
dc:identifier DBLP journals/mr/IvoGBLWBT11 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2010.09.029 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Arkadiusz_Glowacki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Christian_Boit>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Eldad_Bahat-Treidel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C4%BEnther_Tr%E2%88%9A%C2%A7nkle>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Joachim_W%E2%88%9A%C4%BErfl>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ponky_Ivo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Richard_Lossy>
swrc:number 2 (xsd:string)
swrc:pages 217-223 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/IvoGBLWBT11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/IvoGBLWBT11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr51.html#IvoGBLWBT11>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2010.09.029>
dc:title Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 51 (xsd:string)