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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/KakarlaNMZKG17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bhagyalakshmi_Kakarla>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ivana_Kovacevic-Badstuebner>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Johanna_Mueting>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Selamnesh_Nida>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thomas_Ziemann>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ulrike_Grossner>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2017.07.016>
foaf:homepage <https://doi.org/10.1016/j.microrel.2017.07.016>
dc:identifier DBLP journals/mr/KakarlaNMZKG17 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2017.07.016 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bhagyalakshmi_Kakarla>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ivana_Kovacevic-Badstuebner>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Johanna_Mueting>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Selamnesh_Nida>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thomas_Ziemann>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ulrike_Grossner>
swrc:pages 267-271 (xsd:string)
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rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr76.html#KakarlaNMZKG17>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2017.07.016>
dc:title Trade-off analysis of the p-base doping on ruggedness of SiC MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 76-77 (xsd:string)