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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/KimLKLPK12>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bongkoo_Kang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cheolgyu_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chiho_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dongwoo_Kim_0002>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jeongsoo_Park_0005>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seonhaeng_Lee>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2012.06.011>
foaf:homepage <https://doi.org/10.1016/j.microrel.2012.06.011>
dc:identifier DBLP journals/mr/KimLKLPK12 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2012.06.011 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bongkoo_Kang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cheolgyu_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chiho_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dongwoo_Kim_0002>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jeongsoo_Park_0005>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seonhaeng_Lee>
swrc:number 9-10 (xsd:string)
swrc:pages 1901-1904 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/KimLKLPK12/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/KimLKLPK12>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr52.html#KimLKLPK12>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2012.06.011>
dc:title Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 52 (xsd:string)