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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/KimYLKCCKK18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dae_Hwan_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Dong_Myong_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hanbin_Yoo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Heesung_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Junyeap_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seong_Kwang_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sung-Jin_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sungju_Choi>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2018.04.011>
foaf:homepage <https://doi.org/10.1016/j.microrel.2018.04.011>
dc:identifier DBLP journals/mr/KimYLKCCKK18 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2018.04.011 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dae_Hwan_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Dong_Myong_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hanbin_Yoo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Heesung_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Junyeap_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seong_Kwang_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sung-Jin_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sungju_Choi>
swrc:pages 66-70 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/KimYLKCCKK18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/KimYLKCCKK18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr85.html#KimYLKCCKK18>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2018.04.011>
dc:title Comprehensive separate extraction of parasitic resistances in MOSFETs considering the gate bias-dependence and the asymmetric overlap length. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 85 (xsd:string)