Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

Property	Value
dcterms:bibliographicCitation	<http://dblp.uni-trier.de/rec/bibtex/journals/mr/LauQHSCATS07>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/C._H._Tung>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Nathan_P._Sandler>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/P._W._Qian>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/S._E._Ang>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/S._T._Che>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/T._T._Sheng>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Taejoon_Han>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/W._S._Lau>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2006.05.018>
foaf:homepage	<https://doi.org/10.1016/j.microrel.2006.05.018>
dc:identifier	DBLP journals/mr/LauQHSCATS07 (xsd:string)
dc:identifier	DOI doi.org%2F10.1016%2Fj.microrel.2006.05.018 (xsd:string)
dcterms:issued	2007 (xsd:gYear)
swrc:journal	<https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label	Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/C._H._Tung>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Nathan_P._Sandler>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/P._W._Qian>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/S._E._Ang>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/S._T._Che>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/T._T._Sheng>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Taejoon_Han>
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/W._S._Lau>
swrc:number	2-3 (xsd:string)
swrc:pages	429-433 (xsd:string)
owl:sameAs	<http://bibsonomy.org/uri/bibtexkey/journals/mr/LauQHSCATS07/dblp>
owl:sameAs	<http://dblp.rkbexplorer.com/id/journals/mr/LauQHSCATS07>
rdfs:seeAlso	<http://dblp.uni-trier.de/db/journals/mr/mr47.html#LauQHSCATS07>
rdfs:seeAlso	<https://doi.org/10.1016/j.microrel.2006.05.018>
dc:title	Evidence that N2O is a stronger oxidizing agent than O2 for both Ta2O5 and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. (xsd:string)
dc:type	<http://purl.org/dc/dcmitype/Text>
rdf:type	swrc:Article
rdf:type	foaf:Document
swrc:volume	47 (xsd:string)