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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/LeePKL03>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chihoon_Lee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Donggun_Park>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hyeong_Joon_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wonshik_Lee>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2FS0026-2714%2803%2900036-2>
foaf:homepage <https://doi.org/10.1016/S0026-2714(03)00036-2>
dc:identifier DBLP journals/mr/LeePKL03 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2FS0026-2714%2803%2900036-2 (xsd:string)
dcterms:issued 2003 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chihoon_Lee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Donggun_Park>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hyeong_Joon_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wonshik_Lee>
swrc:number 5 (xsd:string)
swrc:pages 735-739 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/LeePKL03/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/LeePKL03>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr43.html#LeePKL03>
rdfs:seeAlso <https://doi.org/10.1016/S0026-2714(03)00036-2>
dc:title Electrical reliability of highly reliable 256M-bit mobile DRAM with top-edge round STI and dual gate oxide. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 43 (xsd:string)