Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mr/LiouSOSCGZH02
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mr/LiouSOSCGZH02
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Adelmo_Ortiz-Conde
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ching-Sung_Ho
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Francisco_J._Garc%E2%88%9A%E2%89%A0a-S%E2%88%9A%C2%B0nchez
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Juin_J._Liou
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/R._Shireen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xiaofang_Gao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Xuecheng_Zou
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2FS0026-2714%2801%2900259-1
>
foaf:
homepage
<
https://doi.org/10.1016/S0026-2714(01)00259-1
>
dc:
identifier
DBLP journals/mr/LiouSOSCGZH02
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2FS0026-2714%2801%2900259-1
(xsd:string)
dcterms:
issued
2002
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mr
>
rdfs:
label
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Adelmo_Ortiz-Conde
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Antonio_Cerdeira
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ching-Sung_Ho
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Francisco_J._Garc%E2%88%9A%E2%89%A0a-S%E2%88%9A%C2%B0nchez
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Juin_J._Liou
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/R._Shireen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xiaofang_Gao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Xuecheng_Zou
>
swrc:
number
3
(xsd:string)
swrc:
pages
343-347
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mr/LiouSOSCGZH02/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mr/LiouSOSCGZH02
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mr/mr42.html#LiouSOSCGZH02
>
rdfs:
seeAlso
<
https://doi.org/10.1016/S0026-2714(01)00259-1
>
dc:
title
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
42
(xsd:string)