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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/MeneghessoMSRZ18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Maria_Ruzzarin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2017.11.004>
foaf:homepage <https://doi.org/10.1016/j.microrel.2017.11.004>
dc:identifier DBLP journals/mr/MeneghessoMSRZ18 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2017.11.004 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Positive and negative threshold voltage instabilities in GaN-based transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlo_De_Santi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Enrico_Zanoni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gaudenzio_Meneghesso>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Maria_Ruzzarin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Matteo_Meneghini>
swrc:pages 257-265 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/MeneghessoMSRZ18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/MeneghessoMSRZ18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr80.html#MeneghessoMSRZ18>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2017.11.004>
dc:title Positive and negative threshold voltage instabilities in GaN-based transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 80 (xsd:string)