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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/MukherjeeDCML17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Arnaud_Curutchet>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Fr%E2%88%9A%C2%A9d%E2%88%9A%C2%A9ric_Darracq>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kalparupa_Mukherjee>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nathalie_Labat>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Nathalie_Malbert>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2017.07.049>
foaf:homepage <https://doi.org/10.1016/j.microrel.2017.07.049>
dc:identifier DBLP journals/mr/MukherjeeDCML17 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2017.07.049 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Arnaud_Curutchet>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Fr%E2%88%9A%C2%A9d%E2%88%9A%C2%A9ric_Darracq>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kalparupa_Mukherjee>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nathalie_Labat>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Nathalie_Malbert>
swrc:pages 350-356 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/MukherjeeDCML17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/MukherjeeDCML17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr76.html#MukherjeeDCML17>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2017.07.049>
dc:title TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 76-77 (xsd:string)