[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/OrLSKX03>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_C._T._Or>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jing-Ping_Xu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Johnny_K._O._Sin>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Paul_C._K._Kwok>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pui-To_Lai>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2FS0026-2714%2802%2900284-6>
foaf:homepage <https://doi.org/10.1016/S0026-2714(02)00284-6>
dc:identifier DBLP journals/mr/OrLSKX03 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2FS0026-2714%2802%2900284-6 (xsd:string)
dcterms:issued 2003 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_C._T._Or>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jing-Ping_Xu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Johnny_K._O._Sin>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Paul_C._K._Kwok>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pui-To_Lai>
swrc:number 1 (xsd:string)
swrc:pages 163-166 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/OrLSKX03/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/OrLSKX03>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr43.html#OrLSKX03>
rdfs:seeAlso <https://doi.org/10.1016/S0026-2714(02)00284-6>
dc:title Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO plasma nitridation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 43 (xsd:string)