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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/ParkLYB16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chul_Seung_Lim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Donghyuk_Yun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kyungbae_Park>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sanghyeon_Baeg>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2015.12.027>
foaf:homepage <https://doi.org/10.1016/j.microrel.2015.12.027>
dc:identifier DBLP journals/mr/ParkLYB16 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2015.12.027 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 √ó nm technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chul_Seung_Lim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Donghyuk_Yun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kyungbae_Park>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sanghyeon_Baeg>
swrc:pages 39-46 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/ParkLYB16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/ParkLYB16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr57.html#ParkLYB16>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2015.12.027>
dc:title Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 √ó nm technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 57 (xsd:string)