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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/PobegenAGN11>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gregor_Pobegen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Michael_Nelhiebel>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Thomas_Aichinger>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tibor_Grasser>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2011.06.024>
foaf:homepage <https://doi.org/10.1016/j.microrel.2011.06.024>
dc:identifier DBLP journals/mr/PobegenAGN11 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2011.06.024 (xsd:string)
dcterms:issued 2011 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gregor_Pobegen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Michael_Nelhiebel>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Thomas_Aichinger>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tibor_Grasser>
swrc:number 9-11 (xsd:string)
swrc:pages 1530-1534 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/PobegenAGN11/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/PobegenAGN11>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr51.html#PobegenAGN11>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2011.06.024>
dc:title Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 51 (xsd:string)