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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/RibesBDMHRG05>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_Roy_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Frederic_Monsieur>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/G._Ribes>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/M._Denais>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/S._Bruy%E2%88%9A%C2%AEre>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vincent_Huard>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2005.03.009>
foaf:homepage <https://doi.org/10.1016/j.microrel.2005.03.009>
dc:identifier DBLP journals/mr/RibesBDMHRG05 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2005.03.009 (xsd:string)
dcterms:issued 2005 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_Roy_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Frederic_Monsieur>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G%E2%88%9A%C2%A9rard_Ghibaudo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/G._Ribes>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/M._Denais>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/S._Bruy%E2%88%9A%C2%AEre>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vincent_Huard>
swrc:number 12 (xsd:string)
swrc:pages 1842-1854 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/RibesBDMHRG05/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/RibesBDMHRG05>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr45.html#RibesBDMHRG05>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2005.03.009>
dc:title Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 45 (xsd:string)