Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks. | D2R Server publishing the DBLP Bibliography Database, hosted at L3S Research Center

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dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Chunxiang_Zhu>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Mansun_Chan>
dc:creator	<https://dblp.l3s.de/d2r/resource/authors/Piyas_Samanta>
foaf:homepage	<http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2010.07.005>
foaf:homepage	<https://doi.org/10.1016/j.microrel.2010.07.005>
dc:identifier	DBLP journals/mr/SamantaZC10 (xsd:string)
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rdfs:label	Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks. (xsd:string)
foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Chunxiang_Zhu>
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foaf:maker	<https://dblp.l3s.de/d2r/resource/authors/Piyas_Samanta>
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dc:title	Comparison of electrical stress-induced charge carrier generation/trapping and related degradation of SiO2 and HfO2/SiO2 gate dielectric stacks. (xsd:string)
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