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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/SasangkaSGMGT17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carl_V._Thompson>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chee_Lip_Gan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Govindo_J._Syaranamual>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Riko_I._Made>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wardhana_A._Sasangka>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Y._Gao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2017.06.057>
foaf:homepage <https://doi.org/10.1016/j.microrel.2017.06.057>
dc:identifier DBLP journals/mr/SasangkaSGMGT17 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2017.06.057 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carl_V._Thompson>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chee_Lip_Gan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Govindo_J._Syaranamual>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Riko_I._Made>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wardhana_A._Sasangka>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Y._Gao>
swrc:pages 287-291 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/SasangkaSGMGT17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/SasangkaSGMGT17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr76.html#SasangkaSGMGT17>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2017.06.057>
dc:title Improved reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) with high density silicon nitride passivation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 76-77 (xsd:string)