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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/SwainDAPS16>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Arka_Dutta>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chandan_Kumar_Sarkar>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sanjit_Kumar_Swain>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sarosij_Adak>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sudhansu_Kumar_Pati>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2016.03.001>
foaf:homepage <https://doi.org/10.1016/j.microrel.2016.03.001>
dc:identifier DBLP journals/mr/SwainDAPS16 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2016.03.001 (xsd:string)
dcterms:issued 2016 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Arka_Dutta>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chandan_Kumar_Sarkar>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sanjit_Kumar_Swain>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sarosij_Adak>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sudhansu_Kumar_Pati>
swrc:pages 24-29 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/SwainDAPS16/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/SwainDAPS16>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr61.html#SwainDAPS16>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2016.03.001>
dc:title Influence of channel length and high-K oxide thickness on subthreshold analog/RF performance of graded channel and gate stack DG-MOSFETs. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 61 (xsd:string)