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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/Voldman05>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Steven_H._Voldman>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2004.10.017>
foaf:homepage <https://doi.org/10.1016/j.microrel.2004.10.017>
dc:identifier DBLP journals/mr/Voldman05 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2004.10.017 (xsd:string)
dcterms:issued 2005 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Steven_H._Voldman>
swrc:number 2 (xsd:string)
swrc:pages 323-340 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/Voldman05/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/Voldman05>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr45.html#Voldman05>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2004.10.017>
dc:title A review of latchup and electrostatic discharge (ESD) in BiCMOS RF silicon germanium technologies: Part I - ESD. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 45 (xsd:string)