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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/mr/XiaoTLJH12>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bo_Jiang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jiancheng_Li>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/John_He>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Minghua_Tang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yongguang_Xiao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2011.11.006>
foaf:homepage <https://doi.org/10.1016/j.microrel.2011.11.006>
dc:identifier DBLP journals/mr/XiaoTLJH12 (xsd:string)
dc:identifier DOI doi.org%2F10.1016%2Fj.microrel.2011.11.006 (xsd:string)
dcterms:issued 2012 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/mr>
rdfs:label The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bo_Jiang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jiancheng_Li>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/John_He>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Minghua_Tang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yongguang_Xiao>
swrc:number 4 (xsd:string)
swrc:pages 757-760 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/mr/XiaoTLJH12/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/mr/XiaoTLJH12>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/mr/mr52.html#XiaoTLJH12>
rdfs:seeAlso <https://doi.org/10.1016/j.microrel.2011.11.006>
dc:title The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 52 (xsd:string)