Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/mr/XuYLYCW12
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/mr/XuYLYCW12
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Fan_Yang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Feng_Yan_0002
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Jianguang_Chang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yonggang_Wang
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yue_Xu
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/ZhiGuo_Li
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1016%2Fj.microrel.2012.02.010
>
foaf:
homepage
<
https://doi.org/10.1016/j.microrel.2012.02.010
>
dc:
identifier
DBLP journals/mr/XuYLYCW12
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1016%2Fj.microrel.2012.02.010
(xsd:string)
dcterms:
issued
2012
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/mr
>
rdfs:
label
Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Fan_Yang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Feng_Yan_0002
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Jianguang_Chang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yonggang_Wang
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yue_Xu
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/ZhiGuo_Li
>
swrc:
number
7
(xsd:string)
swrc:
pages
1337-1341
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/mr/XuYLYCW12/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/mr/XuYLYCW12
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/mr/mr52.html#XuYLYCW12
>
rdfs:
seeAlso
<
https://doi.org/10.1016/j.microrel.2012.02.010
>
dc:
title
Investigation of STI edge effect on programming disturb in localized charge trapping SONOS flash memory cells.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
52
(xsd:string)