Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/sensors/KhanDMR21
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Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/sensors/KhanDMR21
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Abhishek_Motayed
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Md_Ashfaque_Hossain_Khan
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Mulpuri_V._Rao
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Ratan_Debnath
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.3390%2Fs21020624
>
foaf:
homepage
<
https://doi.org/10.3390/s21020624
>
dc:
identifier
DBLP journals/sensors/KhanDMR21
(xsd:string)
dc:
identifier
DOI doi.org%2F10.3390%2Fs21020624
(xsd:string)
dcterms:
issued
2021
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/sensors
>
rdfs:
label
Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Abhishek_Motayed
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Md_Ashfaque_Hossain_Khan
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Mulpuri_V._Rao
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Ratan_Debnath
>
swrc:
number
2
(xsd:string)
swrc:
pages
624
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/sensors/KhanDMR21/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/sensors/KhanDMR21
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/sensors/sensors21.html#KhanDMR21
>
rdfs:
seeAlso
<
https://doi.org/10.3390/s21020624
>
dc:
title
Back-Gate GaN Nanowire-Based FET Device for Enhancing Gas Selectivity at Room Temperature.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
21
(xsd:string)