T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/sensors/RikanKCHYPKHJL22
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T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process.
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T/R RF Switch with 150 ns Switching Time and over 100 dBc IMD for Wideband Mobile Applications in Thick Oxide SOI Process.
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