Design and Characterization of 5 őľm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/sensors/TillementCBJNRGMSGBRB23
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Design and Characterization of 5 őľm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.
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Design and Characterization of 5 őľm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing.
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