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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tc/HaoM93>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Edward_J._McCluskey>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hong_Hao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F12.260643>
foaf:homepage <https://doi.org/10.1109/12.260643>
dc:identifier DBLP journals/tc/HaoM93 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F12.260643 (xsd:string)
dcterms:issued 1993 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tc>
rdfs:label Analysis of Gate Oxide Shorts in CMOS Circuits. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Edward_J._McCluskey>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hong_Hao>
swrc:number 12 (xsd:string)
swrc:pages 1510-1516 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tc/HaoM93/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tc/HaoM93>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tc/tc42.html#HaoM93>
rdfs:seeAlso <https://doi.org/10.1109/12.260643>
dc:subject CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; gate oxide shorts; CMOS circuits; resistance dependence; voltage dependence; temperature dependence; pattern dependence; logic gate operation; defect models; p-channel transistors; n-channel transistors. (xsd:string)
dc:title Analysis of Gate Oxide Shorts in CMOS Circuits. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 42 (xsd:string)