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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tc/SanyalRCK10>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Alodeep_Sanyal>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ashesh_Rastogi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sandip_Kundu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wei_Chen>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTC.2010.75>
foaf:homepage <https://doi.org/10.1109/TC.2010.75>
dc:identifier DBLP journals/tc/SanyalRCK10 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTC.2010.75 (xsd:string)
dcterms:issued 2010 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tc>
rdfs:label An Efficient Technique for Leakage Current Estimation in Nanoscaled CMOS Circuits Incorporating Self-Loading Effects. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Alodeep_Sanyal>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ashesh_Rastogi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sandip_Kundu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wei_Chen>
swrc:number 7 (xsd:string)
swrc:pages 922-932 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tc/SanyalRCK10/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tc/SanyalRCK10>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tc/tc59.html#SanyalRCK10>
rdfs:seeAlso <https://doi.org/10.1109/TC.2010.75>
dc:subject Subthreshold leakage, gate leakage, band-to-band-tunneling leakage, loading effect, Newton-Raphson method. (xsd:string)
dc:title An Efficient Technique for Leakage Current Estimation in Nanoscaled CMOS Circuits Incorporating Self-Loading Effects. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 59 (xsd:string)