A Partial Page Cache Strategy for NVRAM-Based Storage Devices.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/tcad/ChenCCWS20
Home
|
Example Publications
Property
Value
dcterms:
bibliographicCitation
<
http://dblp.uni-trier.de/rec/bibtex/journals/tcad/ChenCCWS20
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Hsin-Wen_Wei
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Shuo-Han_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Tseng-Yi_Chen
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Kuan_Shih
>
dc:
creator
<
https://dblp.l3s.de/d2r/resource/authors/Yuan-Hao_Chang_0001
>
foaf:
homepage
<
http://dx.doi.org/doi.org%2F10.1109%2FTCAD.2018.2887045
>
foaf:
homepage
<
https://doi.org/10.1109/TCAD.2018.2887045
>
dc:
identifier
DBLP journals/tcad/ChenCCWS20
(xsd:string)
dc:
identifier
DOI doi.org%2F10.1109%2FTCAD.2018.2887045
(xsd:string)
dcterms:
issued
2020
(xsd:gYear)
swrc:
journal
<
https://dblp.l3s.de/d2r/resource/journals/tcad
>
rdfs:
label
A Partial Page Cache Strategy for NVRAM-Based Storage Devices.
(xsd:string)
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Hsin-Wen_Wei
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Shuo-Han_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Tseng-Yi_Chen
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Wei-Kuan_Shih
>
foaf:
maker
<
https://dblp.l3s.de/d2r/resource/authors/Yuan-Hao_Chang_0001
>
swrc:
number
2
(xsd:string)
swrc:
pages
373-386
(xsd:string)
owl:
sameAs
<
http://bibsonomy.org/uri/bibtexkey/journals/tcad/ChenCCWS20/dblp
>
owl:
sameAs
<
http://dblp.rkbexplorer.com/id/journals/tcad/ChenCCWS20
>
rdfs:
seeAlso
<
http://dblp.uni-trier.de/db/journals/tcad/tcad39.html#ChenCCWS20
>
rdfs:
seeAlso
<
https://doi.org/10.1109/TCAD.2018.2887045
>
dc:
title
A Partial Page Cache Strategy for NVRAM-Based Storage Devices.
(xsd:string)
dc:
type
<
http://purl.org/dc/dcmitype/Text
>
rdf:
type
swrc:Article
rdf:
type
foaf:Document
swrc:
volume
39
(xsd:string)