A unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 ¬Ķm NMOS devices.
A unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 ¬Ķm NMOS devices.
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A unified triode/saturation model with an improved continuity in the output conductance suitable for CAD of VLSI circuits using deep sub-0.1 ¬Ķm NMOS devices.
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