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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcad/LeblebiciK92>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sung-Mo_Kang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yusuf_Leblebici>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F43.124402>
foaf:homepage <https://doi.org/10.1109/43.124402>
dc:identifier DBLP journals/tcad/LeblebiciK92 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F43.124402 (xsd:string)
dcterms:issued 1992 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcad>
rdfs:label Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sung-Mo_Kang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yusuf_Leblebici>
swrc:number 2 (xsd:string)
swrc:pages 235-246 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcad/LeblebiciK92/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcad/LeblebiciK92>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcad/tcad11.html#LeblebiciK92>
rdfs:seeAlso <https://doi.org/10.1109/43.124402>
dc:title Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 11 (xsd:string)