Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/tcad/ThurnerS90
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1990
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Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5.
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Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5.
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