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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcad/ThurnerS90>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Martin_Thurner>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Siegfried_Selberherr>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F43.57786>
foaf:homepage <https://doi.org/10.1109/43.57786>
dc:identifier DBLP journals/tcad/ThurnerS90 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F43.57786 (xsd:string)
dcterms:issued 1990 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcad>
rdfs:label Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Martin_Thurner>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Siegfried_Selberherr>
swrc:number 8 (xsd:string)
swrc:pages 856-867 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcad/ThurnerS90/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcad/ThurnerS90>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcad/tcad9.html#ThurnerS90>
rdfs:seeAlso <https://doi.org/10.1109/43.57786>
dc:title Three-dimensional effects due to the field oxide in MOS devices analyzed with MINIMOS 5. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 9 (xsd:string)