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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcad/Tsang-PingSB96>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chow_Sit_Tsang-Ping>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Christopher_M._Snowden>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/David_M._Barry>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F43.489101>
foaf:homepage <https://doi.org/10.1109/43.489101>
dc:identifier DBLP journals/tcad/Tsang-PingSB96 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F43.489101 (xsd:string)
dcterms:issued 1996 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcad>
rdfs:label A parallel implementation of an electrothermal simulation for GaAs MESFET devices. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chow_Sit_Tsang-Ping>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Christopher_M._Snowden>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/David_M._Barry>
swrc:number 3 (xsd:string)
swrc:pages 308-316 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcad/Tsang-PingSB96/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcad/Tsang-PingSB96>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcad/tcad15.html#Tsang-PingSB96>
rdfs:seeAlso <https://doi.org/10.1109/43.489101>
dc:title A parallel implementation of an electrothermal simulation for GaAs MESFET devices. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 15 (xsd:string)