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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcad/VenturiSBQJR91>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Bruno_Ricc%E2%88%9A%E2%89%A4>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Carlo_Jacoboni>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Enrico_Sangiorgi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Franco_Venturi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rossella_Brunetti>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Wolfgang_Quade>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F43.88923>
foaf:homepage <https://doi.org/10.1109/43.88923>
dc:identifier DBLP journals/tcad/VenturiSBQJR91 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F43.88923 (xsd:string)
dcterms:issued 1991 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcad>
rdfs:label Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Bruno_Ricc%E2%88%9A%E2%89%A4>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Carlo_Jacoboni>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Enrico_Sangiorgi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Franco_Venturi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rossella_Brunetti>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Wolfgang_Quade>
swrc:number 10 (xsd:string)
swrc:pages 1276-1286 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcad/VenturiSBQJR91/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcad/VenturiSBQJR91>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcad/tcad10.html#VenturiSBQJR91>
rdfs:seeAlso <https://doi.org/10.1109/43.88923>
dc:title Monte Carlo simulations of high energy electrons and holes in Si-n-MOSFET's. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 10 (xsd:string)