[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcad/YueAYT93>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/A._F._Tasch_Jr.>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/C._Patrick_Yue>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Gregory_Munson_Yeric>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Victor_Martin_Agostinelli_Jr.>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F43.256929>
foaf:homepage <https://doi.org/10.1109/43.256929>
dc:identifier DBLP journals/tcad/YueAYT93 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F43.256929 (xsd:string)
dcterms:issued 1993 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcad>
rdfs:label Improved universal MOSFET electron mobility degradation models for circuit simulation. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/A._F._Tasch_Jr.>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/C._Patrick_Yue>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Gregory_Munson_Yeric>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Victor_Martin_Agostinelli_Jr.>
swrc:number 10 (xsd:string)
swrc:pages 1542-1546 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcad/YueAYT93/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcad/YueAYT93>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcad/tcad12.html#YueAYT93>
rdfs:seeAlso <https://doi.org/10.1109/43.256929>
dc:title Improved universal MOSFET electron mobility degradation models for circuit simulation. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 12 (xsd:string)