Novel Wideband Millimeter-Wave GaN Power Amplifier Design Using Transistors With Large Drain Capacitance and High Optimum Load Impedance.
Resource URI: https://dblp.l3s.de/d2r/resource/publications/journals/tcasII/ShiFYSC23
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Novel Wideband Millimeter-Wave GaN Power Amplifier Design Using Transistors With Large Drain Capacitance and High Optimum Load Impedance.
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Novel Wideband Millimeter-Wave GaN Power Amplifier Design Using Transistors With Large Drain Capacitance and High Optimum Load Impedance.
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