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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tcasII/ZhaoWXWY21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hanwu_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Langning_Wang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Qilin_Wu>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tao_Xun>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yuxin_Zhao>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTCSII.2020.3021831>
foaf:homepage <https://doi.org/10.1109/TCSII.2020.3021831>
dc:identifier DBLP journals/tcasII/ZhaoWXWY21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTCSII.2020.3021831 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tcasII>
rdfs:label A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hanwu_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Langning_Wang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Qilin_Wu>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tao_Xun>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yuxin_Zhao>
swrc:number 3 (xsd:string)
swrc:pages 988-992 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tcasII/ZhaoWXWY21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tcasII/ZhaoWXWY21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tcasII/tcasII68.html#ZhaoWXWY21>
rdfs:seeAlso <https://doi.org/10.1109/TCSII.2020.3021831>
dc:title A Scalable, General Purpose Circuit Model for Vanadium Compensated, Semi-Insulating, Vertical 6H-SiC PCSS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 68 (xsd:string)