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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tie/YangZ21>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pinjia_Zhang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yanyong_Yang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTIE.2020.3022526>
foaf:homepage <https://doi.org/10.1109/TIE.2020.3022526>
dc:identifier DBLP journals/tie/YangZ21 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTIE.2020.3022526 (xsd:string)
dcterms:issued 2021 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tie>
rdfs:label In Situ Insulated Gate Bipolar Transistor Junction Temperature Estimation Method via a Bond Wire Degradation Independent Parameter Turn-OFF Vce Overshoot. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pinjia_Zhang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yanyong_Yang>
swrc:number 10 (xsd:string)
swrc:pages 10118-10129 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tie/YangZ21/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tie/YangZ21>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tie/tie68.html#YangZ21>
rdfs:seeAlso <https://doi.org/10.1109/TIE.2020.3022526>
dc:title In Situ Insulated Gate Bipolar Transistor Junction Temperature Estimation Method via a Bond Wire Degradation Independent Parameter Turn-OFF Vce Overshoot. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 68 (xsd:string)