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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/todaes/PraveenS23>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Pushkar_Praveen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._K._Singh>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1145%2F3616538>
foaf:homepage <https://doi.org/10.1145/3616538>
dc:identifier DBLP journals/todaes/PraveenS23 (xsd:string)
dc:identifier DOI doi.org%2F10.1145%2F3616538 (xsd:string)
dcterms:issued 2023 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/todaes>
rdfs:label Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Pushkar_Praveen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._K._Singh>
swrc:month November (xsd:string)
swrc:number 6 (xsd:string)
swrc:pages 105:1-105:29 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/todaes/PraveenS23/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/todaes/PraveenS23>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/todaes/todaes28.html#PraveenS23>
rdfs:seeAlso <https://doi.org/10.1145/3616538>
dc:title Design of Enhanced Reversible 9T SRAM Design for the Reduction in Sub-threshold Leakage Current with14nm FinFET Technology. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 28 (xsd:string)