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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/BaK17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ngoc_Le_Ba>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Tony_Tae-Hyoung_Kim>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2017.2686600>
foaf:homepage <https://doi.org/10.1109/TVLSI.2017.2686600>
dc:identifier DBLP journals/tvlsi/BaK17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2017.2686600 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 %C-300 %C). (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ngoc_Le_Ba>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Tony_Tae-Hyoung_Kim>
swrc:number 8 (xsd:string)
swrc:pages 2383-2387 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/BaK17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/BaK17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi25.html#BaK17>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2017.2686600>
dc:title Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 %C-300 %C). (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 25 (xsd:string)