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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/MukhopadhyayNCAKR03>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Amit_Agarwal_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Cassondra_Neau>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Chris_H._Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Roy_0001>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/R._T._Cakici>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Saibal_Mukhopadhyay>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2003.816145>
foaf:homepage <https://doi.org/10.1109/TVLSI.2003.816145>
dc:identifier DBLP journals/tvlsi/MukhopadhyayNCAKR03 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2003.816145 (xsd:string)
dcterms:issued 2003 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Gate leakage reduction for scaled devices using transistor stacking. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Amit_Agarwal_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Cassondra_Neau>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Chris_H._Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Kaushik_Roy_0001>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/R._T._Cakici>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Saibal_Mukhopadhyay>
swrc:number 4 (xsd:string)
swrc:pages 716-730 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/MukhopadhyayNCAKR03/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/MukhopadhyayNCAKR03>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi11.html#MukhopadhyayNCAKR03>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2003.816145>
dc:title Gate leakage reduction for scaled devices using transistor stacking. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 11 (xsd:string)