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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/NaSCKKJ19>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Byungkyu_Song>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Jung_Pill_Kim>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sara_Choi>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seong-Ook_Jung>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Seung-Hyuk_Kang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Taehui_Na>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2019.2925931>
foaf:homepage <https://doi.org/10.1109/TVLSI.2019.2925931>
dc:identifier DBLP journals/tvlsi/NaSCKKJ19 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2019.2925931 (xsd:string)
dcterms:issued 2019 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Byungkyu_Song>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Jung_Pill_Kim>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sara_Choi>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seong-Ook_Jung>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Seung-Hyuk_Kang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Taehui_Na>
swrc:number 11 (xsd:string)
swrc:pages 2548-2555 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/NaSCKKJ19/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/NaSCKKJ19>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi27.html#NaSCKKJ19>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2019.2925931>
dc:title Offset-Canceling Single-Ended Sensing Scheme With One-Bit-Line Precharge Architecture for Resistive Nonvolatile Memory in 65-nm CMOS. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 27 (xsd:string)