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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/PengZKCT18>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hai-Bao_Chen>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Han_Zhou_0002>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Shaoyi_Peng>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Sheldon_X.-D._Tan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Taeyoung_Kim_0001>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2017.2764880>
foaf:homepage <https://doi.org/10.1109/TVLSI.2017.2764880>
dc:identifier DBLP journals/tvlsi/PengZKCT18 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2017.2764880 (xsd:string)
dcterms:issued 2018 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Physics-Based Compact TDDB Models for Low-k BEOL Copper Interconnects With Time-Varying Voltage Stressing. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hai-Bao_Chen>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Han_Zhou_0002>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Shaoyi_Peng>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Sheldon_X.-D._Tan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Taeyoung_Kim_0001>
swrc:number 2 (xsd:string)
swrc:pages 239-248 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/PengZKCT18/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/PengZKCT18>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi26.html#PengZKCT18>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2017.2764880>
dc:title Physics-Based Compact TDDB Models for Low-k BEOL Copper Interconnects With Time-Varying Voltage Stressing. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 26 (xsd:string)