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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/Taherzadeh-Sani17>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Frederic_Nabki>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hamidreza_Rezaee-Dehsorkh>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mohamad_Sawan>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Mohammad_Taherzadeh-Sani>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Said_M._Hussain_Hussaini>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2017.2654452>
foaf:homepage <https://doi.org/10.1109/TVLSI.2017.2654452>
dc:identifier DBLP journals/tvlsi/Taherzadeh-Sani17 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2017.2654452 (xsd:string)
dcterms:issued 2017 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label A 170-dB ő© CMOS TIA With 52-pA Input-Referred Noise and 1-MHz Bandwidth for Very Low Current Sensing. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Frederic_Nabki>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hamidreza_Rezaee-Dehsorkh>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mohamad_Sawan>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Mohammad_Taherzadeh-Sani>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Said_M._Hussain_Hussaini>
swrc:number 5 (xsd:string)
swrc:pages 1756-1766 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/Taherzadeh-Sani17/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/Taherzadeh-Sani17>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi25.html#Taherzadeh-Sani17>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2017.2654452>
dc:title A 170-dB ő© CMOS TIA With 52-pA Input-Referred Noise and 1-MHz Bandwidth for Very Low Current Sensing. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 25 (xsd:string)