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dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/TangDM97>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/James_D._Meindl>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Xinghai_Tang>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2F92.645063>
foaf:homepage <https://doi.org/10.1109/92.645063>
dc:identifier DBLP journals/tvlsi/TangDM97 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2F92.645063 (xsd:string)
dcterms:issued 1997 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Intrinsic MOSFET parameter fluctuations due to random dopant placement. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/James_D._Meindl>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Vivek_De>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Xinghai_Tang>
swrc:number 4 (xsd:string)
swrc:pages 369-376 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/TangDM97/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/TangDM97>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi5.html#TangDM97>
rdfs:seeAlso <https://doi.org/10.1109/92.645063>
dc:title Intrinsic MOSFET parameter fluctuations due to random dopant placement. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 5 (xsd:string)