[RDF data]
Home | Example Publications
PropertyValue
dcterms:bibliographicCitation <http://dblp.uni-trier.de/rec/bibtex/journals/tvlsi/WangHLWY08>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Huazhong_Yang>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Hui_Wang_0004>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Ku_He>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Rong_Luo>
dc:creator <https://dblp.l3s.de/d2r/resource/authors/Yu_Wang_0002>
foaf:homepage <http://dx.doi.org/doi.org%2F10.1109%2FTVLSI.2008.2000523>
foaf:homepage <https://doi.org/10.1109/TVLSI.2008.2000523>
dc:identifier DBLP journals/tvlsi/WangHLWY08 (xsd:string)
dc:identifier DOI doi.org%2F10.1109%2FTVLSI.2008.2000523 (xsd:string)
dcterms:issued 2008 (xsd:gYear)
swrc:journal <https://dblp.l3s.de/d2r/resource/journals/tvlsi>
rdfs:label Two-Phase Fine-Grain Sleep Transistor Insertion Technique in Leakage Critical Circuits. (xsd:string)
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Huazhong_Yang>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Hui_Wang_0004>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Ku_He>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Rong_Luo>
foaf:maker <https://dblp.l3s.de/d2r/resource/authors/Yu_Wang_0002>
swrc:number 9 (xsd:string)
swrc:pages 1101-1113 (xsd:string)
owl:sameAs <http://bibsonomy.org/uri/bibtexkey/journals/tvlsi/WangHLWY08/dblp>
owl:sameAs <http://dblp.rkbexplorer.com/id/journals/tvlsi/WangHLWY08>
rdfs:seeAlso <http://dblp.uni-trier.de/db/journals/tvlsi/tvlsi16.html#WangHLWY08>
rdfs:seeAlso <https://doi.org/10.1109/TVLSI.2008.2000523>
dc:title Two-Phase Fine-Grain Sleep Transistor Insertion Technique in Leakage Critical Circuits. (xsd:string)
dc:type <http://purl.org/dc/dcmitype/Text>
rdf:type swrc:Article
rdf:type foaf:Document
swrc:volume 16 (xsd:string)